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| Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0335, -0336 Features * Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 2.7 GHz * 12.0 dB Typical Gain at 1.0 GHz * 10.0 dBm Typical P1 dB at 1.0 GHz * Unconditionally Stable (k>1) * Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0336. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request. Description The MSA-0335 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9568E 6-302 MSA-0335, -0336 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 80 mA 425 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,5]: jc = 150C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.7 mW/C for TC > 136C. 4. Storage above +150C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 35 mA, ZO = 50 Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 1.6 GHz Units dB dB GHz Min. 11.5 Typ. 12.5 0.6 2.7 1.6:1 1.7:1 Max. 13.5 1.0 dB dBm dBm psec V mV/C 4.5 10.0 6.0 23.0 125 5.0 -8.0 5.5 Notes: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. MSA-0335, -0336 Part Number Ordering Information Part Number MSA-0335 MSA-0336-BLK MSA-0336-TR1 No. of Devices 10 100 1000 Container Strip Antistatic Bag 7" Reel For more information, see "Tape and Reel Packaging for Semiconductor Devices." 6-303 MSA-0335, -0336 Typical Scattering Parameters (ZO = 50 , TA = 25C, Id = 35 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .05 .05 .04 .04 .03 .02 .03 .08 .14 .21 .27 .31 .37 .51 177 170 161 156 149 154 -104 -136 -157 -176 170 157 125 87 12.6 12.5 12.5 12.4 12.2 12.1 11.6 10.9 10.0 9.0 7.9 6.9 4.9 2.8 4.25 4.24 4.20 4.15 4.09 4.02 3.79 3.49 3.16 2.81 2.49 2.20 1.76 1.38 175 170 160 151 142 132 109 87 71 53 36 20 -10 -38 -18.6 -18.3 -18.3 -18.3 -17.9 -17.6 -16.8 -15.7 -14.9 -14.6 -13.9 -13.6 -12.9 -12.8 .118 .121 .122 .121 .128 .131 .145 .164 .180 .187 .202 .209 .226 .230 1 2 3 5 8 9 13 11 13 8 4 -1 -12 -25 .17 .17 .17 .18 .19 .20 .20 .21 .23 .24 .25 .24 .20 .22 -8 -17 -33 -47 -61 -73 -102 -133 -155 -173 178 177 165 130 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 14 12 Gain Flat to DC 10 60 TC = +125C 50 TC = +25C TC = -55C 40 30 20 10 0 0.1 0.3 0.5 1.0 3.0 6.0 0 1 2 3 Vd (V) 4 5 6 FREQUENCY (GHz) 6 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 15 20 25 30 I d (mA) 35 40 50 14 12 G p (dB) 8 6 4 2 0 G p (dB) I d = 50 mA I d (mA) 10 8 4 Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 35 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. G p (dB) 13 12 11 GP 11 18 15 7.0 P1 dB (dBm) 10 P1 dB 9 8 7 P1 dB (dBm) 6.5 12 9 I d = 35 mA 6 5.5 NF (dB) 6.0 NF (dB) 6 NF 5 4 -55 -25 +25 +85 +125 I d = 20 mA 0 0.1 0.2 0.3 3 5.0 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 I d = 20 mA I d = 35 mA I d = 50 mA 1.0 2.0 4.0 TEMPERATURE (C) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f=1.0 GHz, Id = 35 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-304 35 micro-X Package Dimensions .085 2.15 4 GROUND .083 DIA. 2.11 RF OUTPUT AND BIAS 3 .020 .508 2 GROUND Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 1 .057 .010 1.45 .25 .100 2.54 .022 .56 .455 .030 11.54 .75 .006 .002 .15 .05 A03 RF INPUT 6-305 |
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